eacheon wrote:All right, I guess it is a nonspecific leak. Correct me if I get it wrong, since I'm going to regard it as a linear resistor.
Yep.
1. Is the "series resistance" mentioned in these models actually alias of "the resistance of pipette", or " the resistance of pipette" and "the residual resistance of the ruptured patch" (as "access resistance")?
In theory it should be the latter. Practice is another matter; do you know of an
experimental method for measuring "the residual resistance of the ruptured patch" ?
Why is the "equivalent T" a better electrode model than "equivalent L"?
The question is how to represent distributed electrode resistance and stray capacitance.
A rough approximation is to lump each into a single element (resistor and capacitor), but
then the question is where should the lumped capacitor be located. The problem with
plunking it at one end or the other of the resistance is that most of the distributed
capacitance isn't particularly close to either of those locations--most of it is in between
them. That's why putting it in the middle is better. You can also think about it this way:
If we represent stray capacitance by a lumped capacitor located at the distal end, the
voltage at the proximal end--which is attached to the preamp--would perfectly follow the
membrane potential of the cell (because there would be no current flow through the
electrode resistance, hence the voltage at its proximal and distal ends would be dentical).
So there would be no need to compensate for electrode capacitance. We know this
doesn't happen in the real world, so it's not how we should represent electrode
capacitance in our models.
If on the other hand the lumped capacitor were all located at the proximal end, it would be
possible to perfectly compensate for the electrode capacitance. But this doesn't happen
in the real world either, so it's not a good way to represent the effects of electrode
capacitance.
The third alternative is to place it somewhere in between. Dead center is a reasonable
choice, in the absence of any basis for picking some other location. This representation
gives us a model that needs capacitance compensation, but does not allow perfect
compensation. More faithful to the world in which we live, so a better way to model
electrode capacitance.
Is it justified that the electrode capacitor is connected to half of the voltage drop on the series resistance?
Beg your pardon. One side of the capacitor is grounded; the other side is at a potential
halfway between true Vm and Vi, where Vi is the voltage that appears at the input to the
headstage preamp. Vi = Vm + epsilon, where epsilon is the voltage drop along the
electrode resistance, so the ungrounded side of the lumped capacitor sees
Vm + epsilon/2, not epsilon/2.
The data I am working with are in somewhat different configuration with many ppl have, where the pipette is sunk into brain for ~10 mm and that produces huge capacitance and since cells membrane is ruptured by zapping I suppose the residual resistance of the ruptured patch is also huge. I am suspecting this electrode capacitance might be differently modeled than the "equivalent T".
Depends on many factors. Are you using a driven shield, or do you bother coating the
electrode (except for the last mm or so)? If not, maybe you can calculate how axial
resistance and stray capacitance vary along the business end of your electrodes.
You know what kind of glass you're using, so can determine its dielectric constant.
You also can measure the resistivity of the pipette solution. All you need to know is
how lumen diameter and wall thickness vary within 1-2 cm of the patch end. Then a
little calculus and you have a completely rational basis for the electrode's equivalent
circuit.